MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCW68GLT1/D
General Purpose Transistor
PNP Silicon
COLLECTOR
3
1
BASE
2
EMITTER
BCW68GLT1
3
1
2
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
鈥?5
鈥?0
鈥?.0
鈥?00
Unit
Vdc
Vdc
Vdc
mAdc
CASE 318 鈥?08, STYLE 6
SOT鈥?23 (TO 鈥?236AB)
DEVICE MARKING
BCW68GLT1 = DH
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board (1)
TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
胃JA
PD
556
300
2.4
R
胃JA
TJ, Tstg
417
鈥?55 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage (IC = 鈥?0 mAdc, IB = 0)
Collector鈥揈mitter Breakdown Voltage (IC = 鈥?0
碌A(chǔ)dc,
VEB = 0)
Emitter鈥揃ase Breakdown Voltage (IE = 鈥?0
碌A(chǔ)dc,
IC = 0)
Collector Cutoff Current
(VCE= 鈥?5 Vdc, IE = 0)
(VCE= 鈥?5 Vdc, IB = 0, TA = 150擄C)
Emitter Cutoff Current (VEB = 鈥?.0 Vdc, IC = 0)
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
鈥?/div>
鈥?/div>
IEBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?0
鈥?0
鈥?0
nAdc
碌A(chǔ)dc
nAdc
鈥?5
鈥?0
鈥?.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
Vdc
Thermal Clad is a trademark of the Bergquist Company
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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