BCW65CLT1 Datasheet

IC型號(hào)：
BCW65CLT1
PDF描述：
General Purpose Transistor
文件大?。?/label>
37.73KB
PDF頁(yè)數(shù)：
4頁(yè)
芯片廠家：
ONSEMI

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BCW65ALT1, BCW65CLT1

General Purpose Transistor

NPN Silicon

Features

鈥?/div>

Pb鈭扚ree Package is Available

http://onsemi.com

COLLECTOR

BASE

Symbol

CEO

CBO

EBO

Value

5.0

800

Unit

Vdc

mAdc

MAXIMUM RATINGS

Rating

Collector 鈭扙mitter Voltage

Collector 鈭払ase Voltage

Emitter 鈭払ase Voltage

Collector Current 鈭?Continuous

EMITTER

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

SOT鈭?3

CASE 318

STYLE 6

MARKING DIAGRAM

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation FR鈭?5 Board

(Note 1), T

= 25擄C

Derate above 25擄C

Thermal Resistance,

Junction鈭抰o鈭扐mbient

Total Device Dissipation Alumina

Substrate, (Note 2) T

= 25擄C

Derate above 25擄C

Thermal Resistance,

Junction鈭抰o鈭扐mbient

Junction and Storage Temperature

Symbol

Max

225

1.8

qJA

300

2.4

qJA

, T

stg

417

鈭?5 to +150

mW/擄C

擄C/W

擄C

556

Unit

mW/擄C

擄C/W

EA = Specific Device Code (BCW65ALT1)

EC = Specific Device Code (BCW65CLT1)

M = Date Code

Ex M

ORDERING INFORMATION

Device

BCW65ALT1

BCW65ALT1G

BCW65CLT1

Package

SOT鈭?3

(Pb鈭扚ree)

SOT鈭?3

Shipping

鈥?/div>

3000 / Tape & Reel

1. FR鈭? = 1.0

0.75

0.062 in.

2. Alumina = 0.4

0.3

0.024 in 99.5% alumina.

鈥燜or information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

漏

Semiconductor Components Industries, LLC, 2005

February, 2005 鈭?Rev. 3

Publication Order Number:

BCW65ALT1/D

標(biāo)準(zhǔn)包裝
3,000
類(lèi)別
分離式半導(dǎo)體產(chǎn)品
家庭
晶體管(BJT) - 單路
系列
-
晶體管類(lèi)型
NPN
電流 - 集電極 (Ic)（最大）
800mA
電壓 - 集電極發(fā)射極擊穿（最大）
32V
Ib、Ic條件下的Vce飽和度（最大）
700mV @ 50mA，500mA
電流 - 集電極截止（最大）
20nA
在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE)
250 @ 100mA，1V
功率 - 最大
225mW
頻率 - 轉(zhuǎn)換
100MHz
安裝類(lèi)型
表面貼裝
封裝/外殼
TO-236-3，SC-59，SOT-23-3
供應(yīng)商設(shè)備封裝
SOT-23-3（TO-236）
包裝
帶卷 (TR)

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