ON Semiconductort
General Purpose Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
32
60
5.0
800
Unit
Vdc
Vdc
Vdc
mAdc
BCW65ALT1
3
1
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥? Board
(1)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
417
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
CASE 318鈥?8, STYLE 6
SOT鈥?3 (TO鈥?36AB)
COLLECTOR
3
1
BASE
2
EMITTER
DEVICE MARKING
BCW65ALT1 = EA
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
Collector鈥揈mitter Breakdown Voltage
(I
C
= 10
mAdc,
V
EB
= 0)
Emitter鈥揃ase Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CE
= 32 Vdc, I
E
= 0)
(V
CE
= 32 Vdc, I
E
= 0, T
A
= 150擄C)
Emitter Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
1. FR鈥? = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CES
鈥?/div>
鈥?/div>
I
EBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
20
20
20
nAdc
碌A(chǔ)dc
nAdc
32
60
5.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
Vdc
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 1
Publication Order Number:
BCW65ALT1/D
BCW65ALT1/D相關(guān)型號PDF文件下載
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