鈥?/div>
Refer to KS5086 for graphs
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
Rating
-32
-32
-5.0
-100
350
-55 ~ 150
Unit
V
V
V
mA
mW
擄C
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (T
A
=25擄C)
擄
Characteristic
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
: BCW61B
: BCW61C
: BCW61D
: BCW61A
: BCW61B
: BCW61C
: BCW61D
: BCW61A
: BCW61B
: BCW61C
: BCW61D
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Noise Figure
Turn On Time
Turn Off Time
Symbol
BV
CEO
BV
EBO
I
CES
h
FE
Test Conditions
I
C
= -2mA, I
B
=0
I
E
= -1碌A(chǔ), I
C
=0
V
CB
= -32V, V
BE
=0
V
CE
= -5V, I
C
= -10碌A(chǔ)
Min
-32
-5
-20
20
40
100
120
140
250
380
60
80
100
100
Max
Unit
V
V
nA
V
CE
= -5V, I
C
= -2mA
220
310
460
630
V
CE
= -5V, I
C
= -50mA
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
C
OB
NF
t
ON
t
OFF
I
C
= -50mA, I
B
= -1.25mA
I
C
= -10mA, I
B
= -0.25mA
I
C
= -50mA, I
B
= -1.25mA
I
C
= -10mA, I
B
= -0.25mA
V
CE
= -5V, I
C
= -2mA
V
CB
= -10V, I
E
=0
f=1MHz
I
C
= -0.2mA, V
CE
= -5V
R
G
=20K鈩? f=1KHz
I
C
= -10mA, I
B
1= -1mA
V
BB
= -3.6V, I
B
2= -1mA
R1=R2=50K鈩? R
L
=990鈩?/div>
0.68
0.6
0.6
-0.55
-0.25
1.05
0.85
0.75
6
6
150
800
V
V
V
V
V
pF
dB
ns
ns
Rev. B
漏
1999 Fairchild Semiconductor Corporation
1
2
3
