BCW 31, BCW 32, BCW 33
NPN
General Purpose Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren f眉r die Oberfl盲chenmontage
Power dissipation 鈥?Verlustleistung
2.9
鹵0.1
0.4
3
250 mW
SOT-23
(TO-236)
0.01 g
1.1
Plastic case
Kunststoffgeh盲use
1.3
鹵0.1
Type
Code
1
2
2.5
max
Weight approx. 鈥?Gewicht ca.
Plastic material has UL classification 94V-0
Geh盲usematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
1.9
Dimensions / Ma脽e in mm
1=B
2=E
3=C
Maximum ratings (T
A
= 25
/
C)
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation 鈥?Verlustleistung
Collector current 鈥?Kollektorstrom (DC)
Peak Collector current 鈥?Kollektor-Spitzenstrom
Peak Base current 鈥?Basis-Spitzenstrom
Junction temperature 鈥?Sperrschichttemperatur
Storage temperature 鈥?Lagerungstemperatur
B open
E open
C open
V
CE0
V
CB0
V
EB0
P
tot
I
C
I
CM
I
BM
T
j
T
S
Grenzwerte (T
A
= 25
/
C)
BCW 31, BCW 32, BCW 33
32 V
32 V
5V
250 mW
1
)
100 mA
200 mA
200 mA
150
/
C
- 65鈥? 150
/
C
Kennwerte (T
j
= 25
/
C)
Min.
Typ.
鈥?/div>
鈥?/div>
鈥?/div>
120 mV
210 mV
Max.
100 nA
10
:
A
100 nA
250 mV
鈥?/div>
Characteristics (T
j
= 25
/
C)
Collector-Base cutoff current 鈥?Kollektorreststrom
I
E
= 0, V
CB
= 32 V
I
E
= 0, V
CB
= 32 V, T
j
= 100
/
C
Emitter-Base cutoff current 鈥?Emitterreststrom
I
C
= 0, V
EB
= 5 V
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 50 mA, I
B
= 5 mA
I
EB0
V
CEsat
V
CEsat
鈥?/div>
鈥?/div>
鈥?/div>
Collector saturation volt. 鈥?Kollektor-S盲ttigungsspg.
2
)
I
CB0
I
CB0
鈥?/div>
鈥?/div>
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (L枚tpad) an jedem Anschlu脽
2
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% 鈥?Gemessen mit Impulsen t
p
= 300
:
s, Schaltverh盲ltnis
#
2%
36
01.11.2003
1
BCW33 產(chǎn)品屬性
3,000
分離式半導體產(chǎn)品
晶體管(BJT) - 單路
-
NPN
500mA
32V
250mV @ 500µA，10mA
-
420 @ 2mA，5V
350mW
200MHz
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23
帶卷 (TR)
BCW33相關型號PDF文件下載
-
型號
版本
描述
廠商
下載
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1
2
