LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
3
COLLECTOR
1
BASE
BCW33LT1
3
2
EMITTER
1
2
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Symbol
V
CEO
V
CBO
V
EBO
Value
20
30
5.0
100
Unit
Vdc
Vdc
Vdc
mAdc
CASE 318鈥?8, STYLE 6
SOT鈥?3 (TO鈥?36AB)
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board, (1)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
胃JA
P
D
556
300
2.4
R
胃JA
T
J
, T
stg
417
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
DEVICE MARKING
BCW33LT1 = D3
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(I
C
= 2.0mAdc, I
B
= 0 )
Collector鈥揃ase Breakdown Voltage
(I
C
= 10
碌A(chǔ)dc,
I
B
= 0)
Emitter鈥揃ase Breakdown Voltage
(I
E
= 10
碌A(chǔ)dc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 32 Vdc, I
E
= 0 )
(V
CB
= 32 Vdc, I
E
= 0, T
A
= 100擄C)
1. FR鈥?5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)EBO
I
CBO
鈥?/div>
鈥?/div>
100
10
nAdc
碌A(chǔ)dc
5.0
鈥?/div>
Vdc
V
(BR)CBO
V
(BR)CEO
32
BCW33LT1 產(chǎn)品屬性
3,000
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
NPN
100mA
32V
250mV @ 500µA，10mA
-
420 @ 2mA，5V
225mW
-
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23-3（TO-236）
帶卷 (TR)
BCW33LT1相關(guān)型號PDF文件下載
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