BCW32LT1
General Purpose
Transistors
NPN Silicon
http://onsemi.com
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current 鈥?Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
32
32
5.0
100
Unit
Vdc
Vdc
Vdc
mAdc
1
BASE
COLLECTOR
3
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR-5 Board(1)
TA = 25擄C
Derate above 25擄C
Thermal Resistance,
Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25擄C
Derate above 25擄C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature
(1) FR鈥?5 = 1.0
0.75
(2) Alumina = 0.4
0.3
Symbol
PD
225
1
1.8
R
胃JA
PD
556
300
2.4
R
胃JA
TJ, Tstg
417
鈥?5 to
+150
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
D2x
SOT鈥?3 (TO鈥?36AB)
CASE 318
STYLE 6
2
Value
Unit
mW
3
DEVICE MARKING
0.062 in.
0.024 in. 99.5% alumina.
x = Monthly Date Code
ORDERING INFORMATION
Device
BCW32LT1
Package
SOT鈥?3
Shipping
3000 Units / Reel
漏
Semiconductor Components Industries, LLC, 1999
1
January, 2000 鈥?Rev. 0
Publication Order Number:
BCW32LT1/D