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BCR8CS-12 Datasheet

  • BCR8CS-12

  • TRIAC|600V V(DRM)|8A I(T)RMS|TO-263AB

  • 11頁

  • ETC

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上傳產品規(guī)格書

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MITSUBISHI SEMICONDUCTOR
鈱㏕RIAC鈱?/div>
BCR8CS
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150擄C
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR8CS
OUTLINE DRAWING
Dimensions
in mm
4
1.5 MAX
10.5 MAX
4.5
1.3
1.5 MAX
8.6鹵0.3
9.8鹵0.5
TYPE
NAME
鈭?/div>
3.0
鈥?.5
+0.3
0
鈥?
+0.3
VOLTAGE
CLASS
1
5
0.8
0.5
1 2 3
24
2.6鹵0.4
4.5
鈭?/div>
Measurement
point of case
temperature
鈥?I
T (RMS)
........................................................................ 8A
鈥?V
DRM
....................................................................... 600V
鈥?I
FGT
!
, I
RGT
!
, I
RGT
#
............................................ 20mA
APPLICATION
Solid state relay, hybrid IC
1
1
2
3 3
4
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
T
2
TERMINAL
TO-220S
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
錕?frac12;1
Non-repetitive peak off-state
voltage
錕?frac12;1
Voltage class
12
600
720
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
鈥?/div>
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Typical value
Conditions
Commercial frequency, sine full wave 360擄 conduction,
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
T
c
=105擄C
錕?frac12;3
Ratings
8
80
26
5
0.5
10
2
鈥?0 ~ +125
鈥?0 ~ +125
1.2
Unit
A
A
A
2
s
W
W
V
A
擄C
擄C
g
錕?frac12;1.
Gate open.
Mar. 2002
(1.5)

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  • 英文版
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    ETC
  • 英文版
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  • 英文版
    TRIAC|400V V(DRM)|8A I(T)RMS|TO-220AB
    ETC
  • 英文版
    TRIAC|600V V(DRM)|8A I(T)RMS|TO-220AB
    ETC
  • 英文版
    TRIAC|400V V(DRM)|8A I(T)RMS|TO-220AB
    ETC
  • 英文版
    TRIAC|400V V(DRM)|8A I(T)RMS|TO-220AB
    ETC
  • 英文版
    TRIAC|400V V(DRM)|8A I(T)RMS|TO-263AB
    ETC

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