BCR19PN
NPN/PNP Silicon Digital Transistor Array
4
Switching circuit, inverter, interface circuit,
driver circuit
Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Built in bias resistor (R
1
=4.7k )
5
6
Tape loading orientation
C1
B2
5
E2
4
2
1
3
VPS05604
Top View
654
W1s
123
Direction of Unreeling
Marking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
6
R
1
TR1
R
1
TR2
Position in tape: pin 1
opposite of feed hole side
EHA07193
1
E1
2
B1
3
C2
EHA07290
Type
BCR19PN
Maximum Ratings
Parameter
Marking
W2s
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Symbol
V
CEO
V
CBO
V
EBO
V
i(on)
I
C
P
tot
T
j
T
stg
Value
50
50
10
15
100
250
150
-65 ... 150
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation,
T
S
= 115 擄C
Junction temperature
Storage temperature
mA
mW
擄C
Thermal Resistance
Junction - soldering point
1)
R
thJS
140
K/W
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
Nov-29-2001