BCP69T1 Datasheet

IC型號：
BCP69T1
PDF描述：
MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOU...
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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by BCP69T1/D

PNP Silicon

Epitaxial Transistor

This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current

applications. The device is housed in the SOT-223 package, which is designed for

medium power surface mount applications.

鈥?/div>

High Current: IC = 鈥?.0 Amp

鈥?/div>

The SOT-223 Package can be soldered using wave or reflow.

鈥?/div>

SOT-223 package ensures level mounting, resulting in improved thermal

conduction, and allows visual inspection of soldered joints. The formed leads

absorb thermal stress during soldering, eliminating the possibility of damage to

the die.

鈥?/div>

Available in 12 mm Tape and Reel

Use BCP69T1 to order the 7 inch/1000 unit reel.

Use BCP69T3 to order the 13 inch/4000 unit reel.

鈥?/div>

NPN Complement is BCP68

COLLECTOR 2,4

BCP69T1

Motorola Preferred Device

MEDIUM POWER

PNP SILICON

HIGH CURRENT

TRANSISTOR

SURFACE MOUNT

BASE

EMITTER 3

CASE 318E-04, STYLE 1

TO-261AA

MAXIMUM RATINGS

(TC = 25擄C unless otherwise noted)

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Total Power Dissipation @ TA = 25擄C(1)

Derate above 25擄C

Operating and Storage Temperature Range

Symbol

VCEO

VCBO

VEBO

TJ, Tstg

Value

鈥?25

鈥?20

鈥?5.0

鈥?.0

1.5

鈥?65 to 150

Unit

Vdc

Adc

Watts

mW/擄C

擄C

DEVICE MARKING

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance 鈥?Junction-to-Ambient (surface mounted)

Lead Temperature for Soldering, 0.0625鈥?from case

Time in Solder Bath

Symbol

胃JA

Max

83.3

260

Unit

擄C/W

擄C

Sec

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.

Thermal Clad is a trademark of the Bergquist Company

Preferred

devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola Small鈥揝ignal

漏

Motorola, Inc. 1996

Transistors, FETs and Diodes Device Data

標準包裝
10
類別
分離式半導體產(chǎn)品
家庭
晶體管(BJT) - 單路
系列
-
晶體管類型
PNP
電流 - 集電極 (Ic)（最大）
1A
電壓 - 集電極發(fā)射極擊穿（最大）
20V
Ib、Ic條件下的Vce飽和度（最大）
500mV @ 100mA，1A
電流 - 集電極截止（最大）
-
在某 Ic、Vce 時的最小直流電流增益 (hFE)
85 @ 500mA，1V
功率 - 最大
1.5W
頻率 - 轉換
60MHz
安裝類型
表面貼裝
封裝/外殼
TO-261-4，TO-261AA
供應商設備封裝
SOT-223
包裝
Digi-Reel®
其它名稱
BCP69T1OSDKR

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