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BCP68T1/D Datasheet

  • BCP68T1/D

  • NPN Epitaxial Transistor

  • 67.85KB

  • 8頁

  • ETC

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ON Semiconductort
NPN Silicon
Epitaxial Transistor
This NPN Silicon Epitaxial Transistor is designed for use in low
voltage, high current applications. The device is housed in the
SOT-223 package, which is designed for medium power surface
mount applications.
鈥?/div>
High Current: I
C
= 1.0 Amp
鈥?/div>
The SOT-223 Package can be soldered using wave or reflow.
鈥?/div>
SOT-223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die
鈥?/div>
Available in 12 mm Tape and Reel
Use BCP68T1 to order the 7 inch/1000 unit reel.
Use BCP68T3 to order the 13 inch/4000 unit reel.
鈥?/div>
The PNP Complement is BCP69T1
BCP68T1
ON Semiconductor Preferred Device
MEDIUM POWER
NPN SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT
4
1
2
3
CASE 318E-04, STYLE 1
TO-261AA
COLLECTOR 2,4
BASE
1
EMITTER 3
MAXIMUM RATINGS
(T
C
= 25擄C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T
A
= 25擄C
(1)
Derate above 25擄C
Operating and Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
J
, T
stg
Value
25
20
5
1
1.5
12
鈥?5 to 150
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/擄C
擄C
DEVICE MARKING
CA
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance 鈥?Junction-to-Ambient (surface mounted)
Maximum Temperature for Soldering Purposes
Time in Solder Bath
Symbol
R
胃JA
T
L
Max
83.3
260
10
Unit
擄C/W
擄C
Sec
1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 2
Publication Order Number:
BCP68T1/D

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