鈥?/div>
Device Marking
BCP56T1鈥?0 = BH
BCP56鈥?0T1 = BH鈥?0
BCP56鈥?6T1 = BH鈥?6
MAXIMUM RATINGS
(T
C
= 25擄C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= 25擄C (Note 1.)
Derate above 25擄C
Operating and Storage
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
1.5
12
T
J
, T
stg
鈥?5 to 150
Watts
mW/擄C
擄C
Value
80
100
5
1
Unit
Vdc
4
http://onsemi.com
MEDIUM POWER
NPN SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT
COLLECTOR 2,4
BASE
1
EMITTER
3
MARKING DIAGRAM
Vdc
Vdc
Adc
1
2
3
BHxxx
CASE 318E
TO鈥?61AA
STYLE 1
BHxxx = Device Code
xxx
= 鈥?0 or 鈥?6
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
Junction-to-Ambient
(surface mounted)
Maximum Temperature for
Soldering Purposes
Time in Solder Bath
Symbol
R
胃JA
Max
83.3
Unit
擄C/W
ORDERING INFORMATION
Device
BCP56T1
BCP56T3
T
L
260
10
擄C
Sec
BCP56鈥?0T1
BCP56鈥?6T1
BCP56鈥?6T3
Package
SOT鈥?23
SOT鈥?23
SOT鈥?23
SOT鈥?23
SOT鈥?23
Shipping
1000/Tape & Reel
4000/Tape & Reel
1000/Tape & Reel
1000/Tape & Reel
4000/Tape & Reel
1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x
1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2000
1
September, 2000 鈥?Rev. 2
Publication Order Number:
BCP56T1/D