BCP56-16T3 Datasheet

IC型號：
BCP56-16T3
PDF描述：
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-261AA
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8頁
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BCP56T1 Series

Preferred Devices

NPN Silicon

Epitaxial Transistor

These NPN Silicon Epitaxial transistors are designed for use in

audio amplifier applications. The device is housed in the SOT-223

package, which is designed for medium power surface mount

applications.

鈥?/div>

High Current: 1.0 Amp

鈥?/div>

The SOT-223 package can be soldered using wave or reflow. The

formed leads absorb thermal stress during soldering, eliminating the

possibility of damage to the die

鈥?/div>

Available in 12 mm Tape and Reel

Use BCP56T1 to order the 7 inch/1000 unit reel

Use BCP56T3 to order the 13 inch/4000 unit reel

鈥?/div>

PNP Complement is BCP53T1

鈥?/div>

Device Marking

BCP56T1鈥?0 = BH

BCP56鈥?0T1 = BH鈥?0

BCP56鈥?6T1 = BH鈥?6

MAXIMUM RATINGS

= 25擄C unless otherwise noted)

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Total Power Dissipation

@ T

= 25擄C (Note 1.)

Derate above 25擄C

Operating and Storage

Temperature Range

Symbol

CEO

CBO

EBO

1.5

, T

stg

鈥?5 to 150

Watts

mW/擄C

擄C

Value

100

Unit

Vdc

http://onsemi.com

MEDIUM POWER

NPN SILICON

HIGH CURRENT

TRANSISTOR

SURFACE MOUNT

COLLECTOR 2,4

BASE

EMITTER

MARKING DIAGRAM

Vdc

Adc

BHxxx

CASE 318E

TO鈥?61AA

STYLE 1

BHxxx = Device Code

xxx

= 鈥?0 or 鈥?6

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance

Junction-to-Ambient

(surface mounted)

Maximum Temperature for

Soldering Purposes

Time in Solder Bath

Symbol

胃JA

Max

83.3

Unit

擄C/W

ORDERING INFORMATION

Device

BCP56T1

BCP56T3

260

擄C

Sec

BCP56鈥?0T1

BCP56鈥?6T1

BCP56鈥?6T3

Package

SOT鈥?23

Shipping

1000/Tape & Reel

4000/Tape & Reel

1000/Tape & Reel

4000/Tape & Reel

1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x

1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.

Preferred

devices are recommended choices for future use

and best overall value.

漏

Semiconductor Components Industries, LLC, 2000

September, 2000 鈥?Rev. 2

Publication Order Number:

BCP56T1/D

制造商
ON Semiconductor
產(chǎn)品種類
Transistors Bipolar (BJT)
晶體管極性
NPN
集電極—發(fā)射極最大電壓 VCEO
80 V
發(fā)射極 - 基極電壓 VEBO
5 V
最大直流電集電極電流
1 A
直流集電極/Base Gain hfe Min
25 at 5 mA at 2 V
配置
Single
最大工作頻率
130 MHz
最大工作溫度
+ 150 C
安裝風(fēng)格
SMD/SMT
封裝 / 箱體
SOT-223-4
封裝
Reel
集電極連續(xù)電流
1 A
最小工作溫度
- 65 C
功率耗散
1.5 W
工廠包裝數(shù)量
4000

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