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BCP56-16T1 Datasheet

  • BCP56-16T1

  • NPN Silicon Epitaxial Transistor

  • 4頁(yè)

  • ONSEMI

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BCP56T1 Series
Preferred Devices
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT-223
package, which is designed for medium power surface mount
applications.
Features
http://onsemi.com
鈥?/div>
Pb鈭扚ree Package is Available
鈥?/div>
High Current: 1.0 Amp
鈥?/div>
The SOT-223 package can be soldered using wave or reflow. The
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
鈥?/div>
Available in 12 mm Tape and Reel
Use BCP56T1 to order the 7 inch/1000 unit reel
Use BCP56T3 to order the 13 inch/4000 unit reel
鈥?/div>
PNP Complement is BCP53T1
MAXIMUM RATINGS
(T
C
= 25擄C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= 25擄C (Note 1)
Derate above 25擄C
Operating and Storage
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
1.5
12
T
J
, T
stg
鈭?5 to 150
Watts
mW/擄C
擄C
Value
80
100
5
1
Unit
Vdc
Vdc
Vdc
Adc
MEDIUM POWER NPN SILICON
HIGH CURRENT TRANSISTOR
SURFACE MOUNT
COLLECTOR 2,4
BASE
1
EMITTER
3
4
1
2
3
SOT鈭?23
CASE 318E
STYLE 1
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
AWW
xxxx
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
Junction鈭抰o鈭扐mbient
(surface mounted)
Maximum Temperature for
Soldering Purposes
Time in Solder Bath
Symbol
R
qJA
Max
83.3
Unit
擄C/W
xxxx
A
WW
= Specific Device Code
= Assembly Location
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
T
L
260
10
擄C
Sec
1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in x
1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.
漏
Semiconductor Components Industries, LLC, 2004
1
June, 2004 鈭?Rev. 3
Publication Order Number:
BCP56T1/D

BCP56-16T1 產(chǎn)品屬性

  • 10

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • NPN

  • 1A

  • 80V

  • 500mV @ 50mA，500mA

  • -

  • 100 @ 150mA，2V

  • 1.5W

  • 130MHz

  • 表面貼裝

  • TO-261-4，TO-261AA

  • SOT-223

  • Digi-Reel®

  • BCP56-16T1OSDKR

BCP56-16T1相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    Surface mount Si-Epitaxial PlanarTransistors
    DIOTEC
  • 英文版
    PNP medium power transistors
    PHILIPS
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    INFINEON
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    PNP Silicon AF Transistors (For AF driver and output stages ...
    SIEMENS [S...
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    PNP Silicon AF Transistors
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    Surface mount Si-Epitaxial PlanarTransistors
    DIOTEC [Di...
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    Surface mount Si-Epitaxial PlanarTransistors
    DIOTEC
  • 英文版
    PNP General Purpose Amplifier
    FAIRCHILD
  • 英文版
    PNP Silicon AF Transistors (For AF driver and output stages ...
    INFINEON
  • 英文版
    MEDIUM POWER AMPLIFIER
    STMICROELECTRONICS
  • 英文版
    PNP medium power transistors
    PHILIPS
  • 英文版
    PNP Medium Power Transistors
    KEXIN [Gua...
  • 英文版
    PNP medium power transistors
    PHILIPS [P...
  • 英文版
    PNP General Purpose Amplifier
    FAIRCHILD ...
  • 英文版
    PNP Silicon AF Transistors
    INFINEON [...
  • 英文版
    Surface mount Si-Epitaxial PlanarTransistors
    DIOTEC [Di...
  • 英文版
    PNP Silicon AF Transistors (For AF driver and output stages ...
    SIEMENS [S...
  • 英文版
    MEDIUM POWER AMPLIFIER
    STMICROELECTRON...
  • 英文版
    PNP Silicon AF Transistors (For AF driver and output stages ...
    INFINEON

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