BCP 28, BCP 48
PNP
Darlington Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren f眉r die Oberfl盲chenmontage
Power dissipation 鈥?Verlustleistung
1.65
4
鹵0.2
鹵0.3
6.5
鹵0.1
3
鹵0.2
1.5 W
SOT-223
0.04 g
Plastic case
Kunststoffgeh盲use
3.5
Weight approx. 鈥?Gewicht ca.
Plastic material has UL classification 94V-0
Geh盲usematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
1
0.7
2.3
2
3
3.25
Dimensions / Ma脽e in mm
1 = B1 2, 4 = C 3 = E2
Maximum ratings (T
A
= 25
/
C)
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation 鈥?Verlustleistung
Collector current 鈥?Kollektorstrom (DC)
Peak Collector current 鈥?Kollektor-Spitzenstrom
Base current 鈥?Basisstrom (DC)
Peak Base current 鈥?Basisstrom
Junction temperature 鈥?Sperrschichttemperatur
Storage temperature 鈥?Lagerungstemperatur
B open
E open
C open
- V
CE0
- V
CB0
- V
EB0
P
tot
- I
C
- I
CM
- I
B
- I
BM
T
j
T
S
7
Grenzwerte (T
A
= 25
/
C)
BCP 28
30 V
40 V
10 V
1.5 W
1
)
500 mA
800 mA
100 mA
200 mA
150
/
C
- 65鈥? 150
/
C
BCP 48
60 V
80 V
Characteristics (T
j
= 25
/
C)
Min.
Collector-Base cutoff current 鈥?Kollektorreststrom
I
E
= 0, - V
CB
= 30 V
I
E
= 0, - V
CB
= 60 V
I
E
= 0, - V
CB
= 30 V, T
A
= 150
/
C
I
E
= 0, - V
CB
= 60 V, T
A
= 150
/
C
I
C
= 0, - V
EB
= 4 V
BCP 28
BCP 48
BCP 28
BCP 48
- I
CB0
- I
CB0
- I
CB0
- I
CB0
- I
EB0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Kennwerte (T
j
= 25
/
C)
Typ.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max.
100 nA
100 nA
10
:
A
10
:
A
100 nA
Emitter-Base cutoff current 鈥?Emitterreststrom
1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (L枚tpad) an jedem Anschlu脽
01.11.2003
2
BCP28相關型號PDF文件下載
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