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BCM856S

PNP Silicon AF Transistor Array

4

5

6

10%





Precision matched transistor pair:

I

C

For current mirror applications

Type

BCM856S

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Peak collector current

Total power dissipation-

T

S

= 115 擄C

Junction temperature

Storage temperature

Thermal Resistance

Parameter

Junction - soldering point

1)

1For calculation of

R

thJA

please refer to Application Note Thermal Resistance

Low collector-emitter saturation voltage

Two (galvanic) internal isolated Transistors

Complementary type: BCM846S

C1

6

B2

5

E2

4

2

1

3

VPS05604

TR2

TR1

1

E1

2

B1

3

C2

EHA07175

Marking

Pin Configuration

Package

3Ms

1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

Symbol

V

CEO

V

CES

V

CBO

V

EBO

I

C

I

CM

P

tot

T

j

T

stg

Symbol

R

thJS

Value

65

80

80

5

100

200

250

150

-65 ... 150

Unit

V

mA

mW

擄C

Value

Unit

140

K/W

1

Aug-30-2002

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