BC856S ... BC858S
PNP
General Purpose Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren f眉r die Oberfl盲chenmontage
Dimensions / Ma脽e in mm
2
鹵0.1
6.5
6
Version 2004-04-09
Power dissipation 鈥?Verlustleistung
Plastic case
Kunststoffgeh盲use
310 mW
SOT-363
0.01 g
6.5
5
4
0.9
鹵0.1
1.25
鹵0.1
鹵0.1
2.1
Type
Code
1
2
3
Weight approx. 鈥?Gewicht ca.
Plastic material has UL classification 94V-0
Geh盲usematerial UL94V-0 klassifiziert
2.4
6 = C1
1 = E1
5 = B2
2 = B1
4 = E2
3 = C2
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25
/
C)
BC856S
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation 鈥?Verlustleistung
Collector current 鈥?Kollektorstrom (dc)
Peak Collector current 鈥?Kollektor-Spitzenstrom
Peak Base current 鈥?Basis-Spitzenstrom
Peak Emitter current 鈥?Emitter-Spitzenstrom
Junction temperature 鈥?Sperrschichttemperatur
Storage temperature 鈥?Lagerungstemperatur
B open
E open
C open
- V
CE0
- V
CB0
- V
EB0
P
tot
- I
C
- I
CM
- I
BM
I
EM
T
j
T
S
65 V
80 V
Grenzwerte (T
A
= 25
/
C)
BC857S
45 V
50 V
5V
310 mW
1
)
100 mA
200 mA
200 mA
200 mA
150
/
C
- 65鈥? 150
/
C
BC858S
30 V
30 V
Characteristics (T
j
= 25
/
C)
DC current gain 鈥?Kollektor-Basis-Stromverh盲ltnis
2
)
- V
CE
= 5 V, - I
C
= 10
:
A
- V
CE
= 5 V, - I
C
= 2 mA
h-Parameters at - V
CE
= 5V, - I
C
= 2 mA, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverst盲rkung
Input impedance 鈥?Eingangs-Impedanz
Output admittance 鈥?Ausgangs-Leitwert
Reverse voltage transfer ratio
Spannungsr眉ckwirkung
h
fe
h
ie
h
oe
h
re
h
FE
h
FE
Kennwerte (T
j
= 25
/
C)
typ. 90 ... 270
110 ... 800
typ. 220 ... 600
1.6 ... 15 k
S
18 ... 110
:
S
typ.1.5 ... 3 *10
-4
1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (L枚tpad) an jedem Anschlu脽
2
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% 鈥?Gemessen mit Impulsen t
p
= 300
:
s, Schaltverh盲ltnis
#
2%
18
1
2
