BC858CDXV6T1,
BC858CDXV6T5
Dual General Purpose
Transistor
PNP Dual
http://onsemi.com
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT-563 which is designed for low
power surface mount applications.
鈥?/div>
Lead-Free Solder Plating
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current -
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
-30
-30
-5.0
-100
Unit
V
V
V
mAdc
(3)
(2)
(1)
Q
1
Q
2
(4)
(5)
(6)
6
54
2
3
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
Derate above 25擄C
Thermal Resistance
Ambient
Junction-to-
R
qJA
T
A
= 25擄C
Symbol
P
D
Max
357
(Note 1)
2.9
(Note 1)
350
(Note 1)
Max
500
(Note 1)
4.0
(Note 1)
250
(Note 1)
- 55 to +150
Unit
mW
mW/擄C
擄C/W
1
SOT-563
CASE 463A
PLASTIC
MARKING DIAGRAM
3L D
Characteristic
(Both Junctions Heated)
Total Device Dissipation
Derate above 25擄C
Thermal Resistance Junction-to-Am-
bient
Junction and Storage
Temperature Range
1. FR-4 @ Minimum Pad
T
A
= 25擄C
Symbol
P
D
Unit
mW
mW/擄C
3L = Specific Device Code
D = Date Code
ORDERING INFORMATION
擄C/W
擄C
Device
BC858CDXV6T1
BC858CDXV6T5
Package
SOT-563
SOT-563
Shipping
4 mm pitch
4000/Tape & Reel
2 mm pitch
8000/Tape & Reel
R
qJA
T
J
, T
stg
漏
Semiconductor Components Industries, LLC, 2003
1
March, 2003 - Rev. 2
Publication Order Number:
BC858CDXV6T1/D
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