LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
These transistors are designed for general purpose
amplifier applications. They are housed in the SOT鈥?23/
SC鈥?0 which is designed for low power surface mount
applications.
1
BASE
3
COLLECTOR
BC856AWT1, BWT1
BC857AWT1, BWT1
BC858AWT1, BWT1
CWT1
3
2
EMITTER
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Symbol
V
CEO
V
CBO
V
EBO
BC856
鈥?5
鈥?0
鈥?.0
鈥?00
BC857
鈥?5
鈥?0
鈥?.0
鈥?00
BC858
鈥?0
鈥?0
鈥?.0
鈥?00
Unit
V
V
V
mAdc
1
2
CASE 419鈥?2, STYLE 3
SOT鈥?323 / SC-70
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board, (1)
T
A
= 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
R
胃JA
T
J
, T
stg
Max
150
833
鈥?5 to +150
Unit
mW
擄C/W
擄C
DEVICE MARKING
BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F;
BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(I
C
= 鈥?0 mA)
Collector鈥揈mitter Breakdown Voltage
(I
C
= 鈥?0
碌A,
V
EB
= 0)
BC856 Series
BC857 Series
BC858 Series
BC856 Series
V
(BR)CEO
鈥?65
鈥?45
鈥?30
鈥?80
鈥?50
鈥?30
鈥?80
鈥?50
鈥?30
鈥?5.0
鈥?5.0
鈥?5.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
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鈥?/div>
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鈥?/div>
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鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
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鈥?/div>
鈥?15
鈥?4.0
v
BC857 Series
BC858 Series
Collector鈥揃ase Breakdown Voltage BC856 Series
(I
C
= 鈥?10
碌A)
Emitter鈥揃ase Breakdown Voltage
(I
E
= 鈥?1.0
碌A)
BC857 Series
BC858 Series
BC856 Series
V
(BR)CES
v
V
(BR)CBO
v
BC857 Series,
BC858 Series
Collector Cutoff Current (V
CB
= 鈥?30 V)
(V
CB
= 鈥?30 V, T
A
= 150擄C)
1.FR鈥?=1.0 x 0.75 x 0.062in
V
(BR)EBO
v
nA
碌A
I
CBO
K5鈥?/5
BC857AWT1相關型號PDF文件下載
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廠商
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