BC856BDW1T1/D Datasheet

IC型號(hào)：
BC856BDW1T1/D
PDF描述：
Dual General Purpose Transistors
文件大小：
116.21KB
PDF頁(yè)數(shù)：
8頁(yè)
芯片廠家：
ETC

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BC856BDW1T1,

BC857BDW1T1,

BC857CDW1T1,

BC858BDW1T1,

BC858CDW1T1

Preferred Devices

Dual General Purpose

Transistors

PNP Duals

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT鈥?63/SC鈥?8 which is

designed for low power surface mount applications.

鈥?/div>

Device Marking:

BC856BDW1T1 = 3B

BC857BDW1T1 = 3F

BC857CDW1T1 = 3G

BC858BDW1T1 = 3K

BC858CDW1T1 = 3L

MAXIMUM RATINGS

Rating

Collector鈥揈mitter Voltage

Collector鈥揃ase Voltage

Emitter鈥揃ase Voltage

Collector Current 鈥?/div>

Continuous

Symbol

CEO

CBO

EBO

BC856

鈥?5

鈥?0

鈥?.0

鈥?00

BC857

鈥?5

鈥?0

鈥?.0

鈥?00

BC858

鈥?0

鈥?.0

鈥?00

Unit

mAdc

(3)

http://onsemi.com

(2)

(1)

(4)

(5)

(6)

6 5

SOT鈥?63/SC鈥?8

CASE 419B

STYLE 1

DEVICE MARKING

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation

Per Device

FR鈥? Board (Note 1.)

= 25擄C

Derate Above 25擄C

Thermal Resistance,

Junction to Ambient

Junction and Storage

Temperature Range

1. FR鈥? = 1.0 x 0.75 x 0.062 in

Symbol

Max

380

250

Unit

See Table

3.0

qJA

, T

stg

328

鈥?5 to +150

mW/擄C

擄C/W

擄C

ORDERING INFORMATION

Device

BC856BDW1T1

BC857BDW1T1

BC857CDW1T1

BC858BDW1T1

BC858CDW1T1

Package

SOT鈥?63

Shipping

3000 Units/Reel

Preferred

devices are recommended choices for future use

and best overall value.

漏

Semiconductor Components Industries, LLC, 2001

January, 2001 鈥?Rev. 1

Publication Order Number:

BC856BDW1T1/D

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