SOT23 PNP SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 6 - APRIL 1997
PARTMARKING DETAILS
BC856A聳3A
BC856B聳Z3B
BC857A聳Z3E
BC857B聳3F
BC857C聳3G
BC858A聳3J
BC858B聳3K
BC858C聳3L
BC859A聳Z4A
BC859B聳4B
BC859C聳Z4C
BC860A聳Z4E
BC860B聳4F
BC860C聳4GZ
COMPLEMENTARY TYPES
BC856
BC857
BC858
BC859
BC860
BC846
BC847
BC848
BC849
BC850
BC856
BC858
BC860
BC857
BC859
C
B
SOT23
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BC856
BC857
BC858
BC859
BC860
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Base Current
Power Dissipation at T
amb
=25擄C
Operating and Storage
Temperature Range
PARAMETER
SYMBOL
Max
Collector Cut-Off Current I
CBO
Max
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
EM
I
BM
I
EM
P
tot
T
j
:T
stg
-80
-80
-65
-50
-50
-45
-30
-30
-30
-30
-30
-30
-5
-100
-200
-200
-200
330
-55 to +150
-50
-50
-45
UNIT
V
V
V
V
mA
mA
mA
mA
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
BC856 BC857 BC858 BC859 BC860
-15
-4
-75 -75
-300 -300
-75
-300
-250
-650
-300
-600
-700
-850
-600 -600
-650 -650
-750 -750
-600
-650
-750
-820
-580 -580
-650 -650
-750 -750
-75 -75
-250 -250
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V
CE(sat)
Typ
Max.
Typ
Max.
Typ
Max.
V
BE(sat)
Typ
Typ
UNIT CONDITIONS.
nA
V
CB
= -30V
V
CB
= -30V
碌
A
Tamb=150擄C
mV I
C
=-10mA,
I
B
=-0.5mA
mV I
C
=-100mA,
I
B
=-5mA
mV I
C
=-10mA*
mV
mV
mV
mV
I
C
=-10mA,
I
B
=-0.5mA
I
C
=-100mA,
I
B
=-5mA
I
C
=-2mA
V
CE
=-5V
I
C
=-10mA
V
CE
=-5V
Base-Emitter Voltage
V
BE
Min
Typ
Max
Max
* Collector-Emitter Saturation Voltage at I
C
= 10mA for the characteristics going through the
operating point I
C
= 11mA, V
CE
= 1V at constant base current.
1
2
3
