LESHAN RADIO COMPA N Y, LTD.
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Collector Current(Peak value)
Emitter Current(Peak value)
Base Current(Peak value)
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
EM
I
BM
BC846
65
80
6.0
100
200
200
200
BC847
BC850
45
50
6.0
100
200
200
200
BC848
BC849
30
30
5.0
100
200
200
200
Unit
V
V
V
mAdc
mAdc
mAdc
mAdc
BC846ALT1,BLT1
BC847ALT1,BLT1
CLT1 thru
BC850BLT1,CLT1
3
1
2
SOLDERING CHARACTERISTICS
Characteristic
Solder Heat Resistance
Solderability
Symbol
265
240 to 265
Symbol
P
D
225
1.8
R
胃
JA
P
D
556
300
R
胃
JA
T
J
, T
stg
2.4
417
鈥?5 to +150
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
Unit
擄C
擄C
CASE 318鈥?8, STYLE 6
SOT鈥?3 (TO鈥?36AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board, (1)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Max
Unit
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F;
BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(I
C
= 10 mA)
Collector鈥揈mitter Breakdown Voltage
(I
C
= 10
碌A(chǔ),
V
EB
= 0)
Collector鈥揃ase Breakdown Voltage
(I
C
= 10
碌A(chǔ))
Emitter鈥揃ase Breakdown Voltage
(I
E
= 1.0
碌A(chǔ))
Collector Cutoff Current
BC846A,B
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
BC846A,B
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
BC846A,B
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
BC846A,B
BC847A,B,C
V
(BR)CEO
65
45
30
80
50
30
80
50
30
6.0
5.0
5.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
v
V
(BR)CES
v
V
(BR)CBO
v
BC848A,B,C, BC849B,C,
BC850B,C
(V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150擄C)
V
(BR)EBO
I
CBO
鈥?/div>
鈥?/div>
15
5.0
nA
碌A(chǔ)
1. FR鈥? = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
M3鈥?/4
BC849BLT1 產(chǎn)品屬性
3,000
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
NPN
100mA
30V
600mV @ 5mA，100mA
-
200 @ 2mA，5V
225mW
100MHz
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23-3（TO-236）
帶卷 (TR)
BC849BLT1相關(guān)型號(hào)PDF文件下載
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