鈥?/div>
Complement to BC856 ... BC860
NPN EPITAXIAL
SILICON TRANSISTOR
SOT-23
ABSOLUTE MAXIMUM RATINGS (T
A
=25擄C)
擄
Characteristic
Collector Base Voltage
: BC846
: BC847/850
: BC848/849
Collector Emitter Voltage
: BC846
: BC847/850
: BC848/849
Emitter-Base Voltage
: BC846/847
: BC848/849/850
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
80
50
30
V
CEO
65
45
30
V
EBO
6
5
100
310
150
-65 ~ 150
V
V
mA
mW
擄C
擄C
V
V
V
V
V
V
Rating
Unit
I
C
P
C
T
J
T
STG
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (T
A
=25擄C)
擄
Characteristic
Collector Cut-off Current
DC Current Gain
Collector Emitter Saturation Voltage
Collector Base Saturation Voltage
Base Emitter On Voltage
Current Gain Bandwidth Product
Collector Base Capacitance
Emitter Base Capacitance
Noise Figure
: BC846/847/848
: BC849/850
: BC849
: BC850
Symbol
I
CBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
C
CBO
C
EBO
NF
NF
Test Conditions
V
CB
=30V, I
E
=0
V
CE
=5V, I
C
=2mA
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
V
CE
=5V, I
C
=2mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=10mA
f=100MHz
V
CB
=10V, f=1MHz
V
EB
=0.5V, f=1MHz
V
CE
=5V, I
C
=200碌A(chǔ)
f=1KHz, R
G
=2K鈩?/div>
V
CE
=5V, I
C
=200碌A(chǔ)
R
G
=2K鈩?/div>
f=30~15000Hz
Min
Typ
Max
15
800
250
600
Unit
nA
mV
mV
mV
mV
mV
mV
MHz
pF
pF
dB
dB
dB
dB
110
90
200
700
900
660
300
3.5
9
2
1.2
1.4
1.4
580
700
720
6
10
4
4
3
h
FE
CLASSIFICATION
Classification
h
FE
A
110-220
B
200-450
C
420-800
MARKING CODE
TYPE
MARK
846A
8AA
846B
8AB
846C
8AC
847A
8BA
847B
8BB
847C
8BC
848A
8CA
848B
8CB
848C
8CC
849A
8DA
849B
8DB
849C
8DC
850A
8EA
850B
8EB
850C
8EC
Rev. B
漏
1999 Fairchild Semiconductor Corporation
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2
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