BC848BLT3 Datasheet

IC型號(hào)：
BC848BLT3
PDF描述：
ON Semiconductor [General Purpose Transistors(NPN Silicon)]
文件大小：
96.05KB
芯片廠家：
ONSEMI

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BC846ALT1 Series

BC846, BC847 and BC848 are Preferred Devices

General Purpose

Transistors

NPN Silicon

Features

http://onsemi.com

COLLECTOR

BASE

Symbol

CEO

CBO

EBO

BC846

BC847, BC850

BC848, BC849

Collector Current 鈭?Continuous

6.0

5.0

100

mAdc

Vdc

鈥?/div>

Pb鈭扚ree Packages are Available

鈥?/div>

Moisture Sensitivity Level: 1

鈥?/div>

ESD Rating 鈭?Human Body Model: >4000 V

ESD Rating

鈭?Machine Model: >400 V

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage

BC846

BC847, BC850

BC848, BC849

Collector鈭払ase Voltage

BC846

BC847, BC850

BC848, BC849

Emitter鈭払ase Voltage

Value

Unit

Vdc

EMITTER

SOT鈭?3

CASE 318

STYLE 6

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

MARKING DIAGRAM

xxD

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation FR鈭?5 Board,

(Note 1)

= 25擄C

Derate above 25擄C

Thermal Resistance,

Junction鈭抰o鈭扐mbient (Note 1)

Total Device Dissipation

Alumina Substrate (Note 2)

= 25擄C

Derate above 25擄C

Thermal Resistance,

Junction鈭抰o鈭扐mbient (Note 2)

Junction and Storage

Temperature Range

Symbol

Max

225

Unit

= Specific Device Code

= Date Code

1.8

qJA

556

300

mW/擄C

擄C/W

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

2.4

qJA

, T

stg

417

鈭?5 to

+150

mW/擄C

擄C/W

擄C

Preferred

devices are recommended choices for future use

and best overall value.

1. FR鈭? = 1.0

0.75

0.062 in.

2. Alumina = 0.4

0.3

0.024 in 99.5% alumina.

漏

Semiconductor Components Industries, LLC, 2004

June, 2004 鈭?Rev. 6

Publication Order Number:

BC846ALT1/D

BC848BLT3 PDF文件相關(guān)型號(hào)

BC848CLT1G

BC848BLT3 產(chǎn)品屬性

制造商
ON Semiconductor
產(chǎn)品種類(lèi)
Transistors Bipolar (BJT)
晶體管極性
NPN
集電極—發(fā)射極最大電壓 VCEO
30 V
發(fā)射極 - 基極電壓 VEBO
5 V
最大直流電集電極電流
0.1 A
直流集電極/Base Gain hfe Min
150 at 10 uA at 5 V
配置
Single
最大工作頻率
100 MHz
最大工作溫度
+ 150 C
安裝風(fēng)格
SMD/SMT
封裝 / 箱體
SOT-23-3
封裝
Reel
集電極連續(xù)電流
0.1 A
最小工作溫度
- 55 C
功率耗散
225 mW
工廠包裝數(shù)量
10000

BC848BLT3相關(guān)型號(hào)PDF文件下載

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