BC847CDW1T1 Datasheet

IC型號(hào)：
BC847CDW1T1
PDF描述：
TRANSISTOR | BJT | PAIR | NPN | 45V V(BR)CEO | 100MA I(C) | ...
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BC846BDW1T1,

BC847BDW1T1 Series,

BC848BDW1T1 Series

Dual General Purpose

Transistors

NPN Duals

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT鈥?63/SC鈥?8 which is

designed for low power surface mount applications.

(3)

http://onsemi.com

(2)

(1)

鈥?/div>

Device Marking:

BC846BDW1T1 = 1B

BC847BDW1T1 = 1F

BC847CDW1T1 = 1G

BC848BDW1T1 = 1K

BC848CDW1T1 = 1L

MAXIMUM RATINGS

(4)

(5)

(6)

6 5

Rating

Collector鈥揈mitter Voltage

Collector鈥揃ase Voltage

Emitter鈥揃ase Voltage

Collector Current 鈥?/div>

Continuous

Symbol

VCEO

VCBO

VEBO

BC846

6.0

100

BC847

6.0

100

BC848

5.0

100

Unit

mAdc

SOT鈥?63

CASE 419B

STYLE 1

DEVICE MARKING

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation

Per Device

FR鈥? Board (Note 1.)

TA = 25擄C

Derate Above 25擄C

Thermal Resistance,

Junction to Ambient

Junction and Storage

Temperature Range

1. FR鈥? = 1.0 x 0.75 x 0.062 in

Symbol

Max

380

250

Unit

3.0

qJA

TJ, Tstg

328

鈥?5 to +150

mW/擄C

擄C/W

擄C

1x = Specific Device Code

x1 = B, F, G, K, L

ORDERING INFORMATION

Device

BC846BDW1T1

BC847BDW1T1

BC847CDW1T1

BC848BDW1T1

BC848CDW1T1

Package

SOT鈥?63

Shipping

3000 Units/Reel

漏

Semiconductor Components Industries, LLC, 2001

September, 2001 鈥?Rev. 1

Publication Order Number:

BC846BDW1T1/D

制造商
ON Semiconductor
產(chǎn)品種類
Transistors Bipolar (BJT)
晶體管極性
NPN
集電極—發(fā)射極最大電壓 VCEO
45 V
發(fā)射極 - 基極電壓 VEBO
6 V
最大直流電集電極電流
0.1 A
直流集電極/Base Gain hfe Min
420 at 2 mA at 5 V
配置
Dual
最大工作頻率
100 MHz
最大工作溫度
+ 150 C
安裝風(fēng)格
SMD/SMT
封裝 / 箱體
SC-70-6
封裝
Reel
集電極連續(xù)電流
0.1 A
最小工作溫度
- 55 C
功率耗散
380 mW
工廠包裝數(shù)量
3000

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