LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
BC847BRLT1
3
COLLECTOR
is LRC prefered Device
1
BASE
3
2
EMITTER
1
2
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CEO
V
CBO
V
EBO
CASE 318鈥?7, STYLE 6
SOT鈥?23 (TO鈥?36AB)
Value
50
60
7.0
150
0.2
150
-55 ~+150
Unit
V
V
V
mAdc
W
擄C
擄C
I
C
P
C
T
j
T
stg
DEVICE MARKING
BC847BRLT1 =G1F
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted.)
Characteristic
Collector鈥揈mitter Breakdown Voltage
(I
C
= 1 mA)
Emitter鈥揃ase Breakdown Voltage
(I
E
= 50
碌A(chǔ))
Collector鈥揃ase Breakdown Voltage
(I
C
= 50
碌A(chǔ))
Collector Cutoff Current
(V
CB
= 60 V)
Emitter cutoff current
(V
EB
= 7 V)
Collector-emitter saturation voltage
(I
C
/ I
B
= 50 mA / 5m A)
DC current transfer ratio
(V
CE
= 6 V, I
C
= 1mA)
Transition frequency
(V
CE
= 12 V, I
E
= 鈥?2mA, f =30MHz )
Output capacitance
(V
CB
= 12 V, I
E
= 0A, f =1MHz )
Symbol
V
V
V
(BR)CEO
Min
50
7
60
鈥?/div>
鈥?/div>
鈥?/div>
120
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥撯€?/div>
180
2.0
Max
鈥?/div>
鈥?/div>
鈥?/div>
0.1
0.1
0.4
560
鈥撯€?/div>
3.5
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
V
鈥撯€?/div>
MHz
pF
(BR)EBO
(BR)CBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
C
ob
h
FE
values are classified as follows:
hFE
*
Q
120~270
R
180~390
S
270~560
M36鈥?/3
BC847BRLT1相關(guān)型號PDF文件下載
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