BC846UPN
NPN/PNP Silicon AF Transistor Array
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Two (galvanic) internal isolated NPN/PNP
Transistors in one package
5
6
4
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
3
2
1
VPW09197
C1
6
B2
5
E2
4
Tape loading orientation
Top View
6 5 4
W1s
1 2 3
Direction of Unreeling
Position in tape: pin 1
opposite of feed hole side
SC74_Tape
TR1
Marking on SC74 package
(for example W1s)
corresponds to pin 1 of device
TR2
1
E1
2
B1
3
C2
EHA07177
Type
BC846UPN
Maximum Ratings
Parameter
Marking
1Os
Pin Configuration
Package
1=E 2=B 3=C 4=E 5=B 6=C SC74
Symbol
V
CEO
V
CBO
V
CES
V
EBO
I
C
I
CM
P
tot
T
j
T
stg
Value
65
80
80
5
100
200
250
-65 ... 150
mW
擄C
V
V
mA
Unit
V
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC collector current
Peak collector current
Total power dissipation,
T
S
= 118 擄C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
R
thJS
130
K/W
Aug-21-2002