ON Semiconductort
General Purpose Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT鈥?23/SC鈥?0 which is
designed for low power surface mount applications.
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
BC846
65
80
6.0
100
BC847
45
50
6.0
100
BC848
30
30
5.0
100
Unit
V
V
V
mAdc
BC846AWT1,BWT1
BC847AWT1,BWT1,
CWT1
BC848AWT1,BWT1,
CWT1
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥? Board, (1)
T
A
= 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Junction and Storage Temperature
Symbol
P
D
R
qJA
P
D
T
J
, T
stg
Max
150
833
2.4
鈥?5 to +150
Unit
mW
擄C/W
mW/擄C
擄C
1
2
CASE 419鈥?2, STYLE 3
SOT鈥?23/SC鈥?0
COLLECTOR
3
1
BASE
2
EMITTER
DEVICE MARKING
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;
BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(I
C
= 10 mA)
Collector鈥揈mitter Breakdown Voltage
(I
C
= 10
碌A,
V
EB
= 0)
Collector鈥揃ase Breakdown Voltage
(I
C
= 10
mA)
Emitter鈥揃ase Breakdown Voltage
(I
E
= 1.0
mA)
Collector Cutoff Current (V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150擄C)
1. FR鈥? = 1.0 x 0.75 x 0.062 in
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series
BC848 Series
V
(BR)CEO
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
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15
5.0
V
V
(BR)CES
V
V
(BR)CBO
V
V
(BR)EBO
V
I
CBO
nA
碌A
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 1
Publication Order Number:
BC846AWT1/D
BC846AWT1/D相關型號PDF文件下載
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