BC 817W / BC 818W
NPN
General Purpose Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren f眉r die Oberfl盲chenmontage
Power dissipation 鈥?Verlustleistung
2
鹵0.1
0.3
3
225 mW
SOT-323
0.01 g
1
鹵0.1
1.25
鹵0.1
Plastic case
Kunststoffgeh盲use
Weight approx. 鈥?Gewicht ca.
Plastic material has UL classification 94V-0
Geh盲usematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Type
Code
1
2
1.3
Dimensions / Ma脽e in mm
1=B
2=E
3=C
Maximum ratings (T
A
= 25
/
C)
Collector-Emitter-voltage
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation 鈥?Verlustleistung
Collector current 鈥?Kollektorstrom (DC)
Peak Coll. current 鈥?Kollektor-Spitzenstrom
Peak Base current 鈥?Basis-Spitzenstrom
Peak Emitter current 鈥?Emitter-Spitzenstrom
Junction temperature 鈥?Sperrschichttemperatur
Storage temperature 鈥?Lagerungstemperatur
B open
B shorted
E open
C open
V
CE0
V
CES
V
CB0
V
EB0
P
tot
I
C
I
CM
I
BM
- I
EM
T
j
T
S
2.1
鹵0.1
Grenzwerte (T
A
= 25
/
C)
BC 817W
45 V
50 V
50 V
5V
225 mW
1
)
500 mA
1000 mA
200 mA
1000 mA
150
/
C
- 65鈥? 150
/
C
BC 818W
25 V
30 V
30 V
Characteristics, T
j
= 25
/
C
Min.
DC current gain 鈥?Kollektor-Basis-Stromverh盲ltnis
V
CE
= 1 V, I
C
= 100 mA
V
CE
= 1 V, I
C
= 500 mA
V
CE
= 1 V, I
C
= 100 mA
BC817W
BC818W
Group -16W
Group -25W
Group -40W
h
FE
h
FE
h
FE
h
FE
h
FE
100
40
100
160
250
Kennwerte, T
j
= 25
/
C
Typ.
鈥?/div>
鈥?/div>
160
250
400
Max.
600
鈥?/div>
250
400
600
1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (L枚tpad) an jedem Anschlu脽
01.11.2003
8
1
2
