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BC817U

NPN Silicon Transistor Array

For AF input stages and driver applications

High current gain

Low collector-emitter saturation voltage

Two ( galvanic) internal isolated Transistors

with good matching in one package

5

6

4

3

2

1

VPW09197

C1

6

B2

5

E2

4

TR2

TR1

1

E1

2

B1

3

C2

EHA07178

Type

BC817U

Maximum Ratings

Parameter

Marking

6Bs

Pin Configuration

Package

1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74

Symbol

V

CEO

V

CBO

V

EBO

I

C

I

CM

I

B

I

BM

P

tot

T

j

T

stg

Value

45

50

5

500

1

100

200

330

150

-65 ... 150

Unit

V

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

DC collector current

Peak collector current

Base current

Peak base current

Total power dissipation,

T

S

= 115 擄C

Junction temperature

Storage temperature

mA

A

mA

mW

擄C

Thermal Resistance

Junction - soldering point

1)

R

thJS

105

K/W

1For calculation of

R

thJA

please refer to Application Note Thermal Resistance

1

Nov-29-2001

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