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BC817UPN

NPN/PNP Silicon Transistor Array

For AF input stages and driver applications

High current gain

Low collector-emitter saturation voltage

Two (galvanic) internal isolated NPN/PNP

Transistors in one package

5

6

4

Tape loading orientation

1For calculation of

R

thJA

please refer to Application Note Thermal Resistance

1

3

2

1

VPW09197

C1

6

B2

5

E2

4

Top View

6 5 4

W1s

1 2 3

Direction of Unreeling

Marking on SC74 package

(for example W1s)

corresponds to pin 1 of device

TR2

TR1

Position in tape: pin 1

opposite of feed hole side

SC74_Tape

1

E1

2

B1

3

C2

EHA07177

Type

BC817UPN

Maximum Ratings

Parameter

Marking

1Bs

Pin Configuration

Package

1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74

Symbol

V

CEO

V

CBO

V

EBO

I

C

I

CM

I

B

I

BM

P

tot

T

j

T

stg

Value

45

50

5

500

1

100

200

330

150

-65 ... 150

Unit

V

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

DC collector current

Peak collector current

Base current

Peak base current

Total power dissipation,

T

S

= 115 擄C

Junction temperature

Storage temperature

mA

A

mA

mW

擄C

Thermal Resistance

Junction - soldering point

1)

R

thJS

105

K/W

Aug-21-2002

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