LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
3
COLLECTOR
1
BASE
BC817-16LT1
BC817-25LT1
BC817-40LT1
3
2
EMITTER
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
45
50
5.0
500
Unit
V
V
V
mAdc
1
2
CASE 318鈥?8, STYLE 6
SOT鈥?3 (TO鈥?36AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board, (1)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
225
1.8
R
胃JA
P
D
556
300
2.4
R
胃JA
T
J
, T
stg
417
鈥?5 to +150
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
Max
Unit
DEVICE MARKING
BC817鈥?6LT1 = 6A; BC817鈥?5LT1 = 6B; BC817鈥?0LT1 = 6C
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(I
C
= 鈥?0 mA)
Collector鈥揈mitter Breakdown Voltage
(V
EB
= 0, I
C
= 鈥?0
碌A(chǔ))
Emitter鈥揃ase Breakdown Voltage
(I
E
= 鈥?.0
碌A(chǔ))
Collector Cutoff Current
(V
CB
= 20 V)
(V
CB
= 20 V, T
A
= 150擄C)
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)EBO
V
(BR)CEO
45
鈥?/div>
鈥?/div>
V
V
(BR)CES
50
鈥?/div>
鈥?/div>
V
5.0
鈥?/div>
鈥?/div>
V
I
CBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
100
5.0
nA
碌A(chǔ)
M2鈥?/2
BC817-40LT1 產(chǎn)品屬性
10
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
NPN
500mA
45V
700mV @ 50mA，500mA
-
250 @ 100mA，1V
225mW
100MHz
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23-3（TO-236）
剪切帶 (CT)
BC817-40LT1OSCT
BC817-40LT1相關(guān)型號PDF文件下載
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