MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC817鈥?6LT1/D
General Purpose Transistors
NPN Silicon
2
BASE
1
EMITTER
Symbol
VCEO
VCBO
VEBO
IC
Value
45
50
5.0
500
Unit
V
V
V
mAdc
COLLECTOR
3
BC817-16LT1
BC817-25LT1
BC817-40LT1
3
1
2
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
CASE 318 鈥?08, STYLE 6
SOT鈥?23 (TO 鈥?236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board, (1)
TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
225
1.8
R
q
JA
PD
300
2.4
R
q
JA
TJ, Tstg
417
鈥?55 to +150
mW
mW/擄C
擄C/W
擄C
556
mW
mW/擄C
擄C/W
Max
Unit
DEVICE MARKING
BC817鈥?6LT1 = 6A; BC817鈥?5LT1 = 6B; BC817鈥?0LT1 = 6C
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 鈥?0 mA)
Collector 鈥?Emitter Breakdown Voltage
(VEB = 0, IC = 鈥?0
碌A)
Emitter 鈥?Base Breakdown Voltage
(IE = 鈥?.0
m
A)
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TA = 150擄C)
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
100
5.0
nA
碌A
45
50
5.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
V
V
V
Thermal Clad is a registered trademark of the Bergquist Company.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
BC817-16LT1 產品屬性
3,000
分離式半導體產品
晶體管(BJT) - 單路
-
NPN
500mA
45V
700mV @ 50mA，500mA
-
100 @ 100mA，1V
225mW
100MHz
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23-3（TO-236）
帶卷 (TR)
BC817-16LT1OSTR
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