ON Semiconductort
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
45
50
5.0
500
Unit
V
V
V
mAdc
BC817-16LT1
BC817-25LT1
BC817-40LT1
3
1
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥? Board, (1)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
鈥?5 to +150
mW
mW/擄C
擄C/W
擄C
1
BASE
556
mW
mW/擄C
擄C/W
Max
Unit
CASE 318鈥?8, STYLE 6
SOT鈥?3 (TO鈥?36AB)
COLLECTOR
3
DEVICE MARKING
BC817鈥?6LT1 = 6A; BC817鈥?5LT1 = 6B; BC817鈥?0LT1 = 6C
2
EMITTER
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(I
C
= 鈥?0 mA)
Collector鈥揈mitter Breakdown Voltage
(V
EB
= 0, I
C
= 鈥?0
碌A(chǔ))
Emitter鈥揃ase Breakdown Voltage
(I
E
= 鈥?.0
mA)
Collector Cutoff Current
(V
CB
= 20 V)
(V
CB
= 20 V, T
A
= 150擄C)
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
100
5.0
nA
碌A(chǔ)
45
50
5.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
V
V
V
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 3
Publication Order Number:
BC817鈥?6LT1/D
BC817-16LT1/D相關(guān)型號PDF文件下載
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型號
版本
描述
廠商
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