MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC807鈥?6LT1/D
General Purpose Transistors
PNP Silicon
2
BASE
1
EMITTER
Symbol
VCEO
VCBO
VEBO
IC
Value
鈥?5
鈥?0
鈥?.0
鈥?00
Unit
V
V
V
mAdc
COLLECTOR
3
BC807-16LT1
BC807-25LT1
BC807-40LT1
3
1
2
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
CASE 318 鈥?08, STYLE 6
SOT鈥?23 (TO 鈥?236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board, (1)
TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
225
1.8
R
q
JA
PD
300
2.4
R
q
JA
TJ, Tstg
417
鈥?55 to +150
mW
mW/擄C
擄C/W
擄C
556
mW
mW/擄C
擄C/W
Max
Unit
DEVICE MARKING
BC807鈥?6LT1 = 5A; BC807鈥?5LT1 = 5B; BC807鈥?0LT1 = 5C
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 鈥?0 mA)
Collector 鈥?Emitter Breakdown Voltage
(VEB = 0, IC = 鈥?0
碌A(chǔ))
Emitter 鈥?Base Breakdown Voltage
(IE = 鈥?.0
m
A)
Collector Cutoff Current
(VCB = 鈥?0 V)
(VCB = 鈥?0 V, TJ = 150擄C)
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?00
鈥?.0
nA
碌A(chǔ)
鈥?5
鈥?0
鈥?.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
V
V
V
Thermal Clad is a trademark of the Bergquist Company.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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