LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
3
COLLECTOR
2
BASE
BC807-16LT1
BC807-25LT1
BC807-40LT1
1
EMITTER
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Symbol
V
CEO
V
CBO
V
EBO
3
Value
鈥?5
鈥?0
鈥?.0
鈥?00
Unit
V
V
V
mAdc
1
2
CASE 318鈥?8, STYLE 6
SOT鈥?3 (TO鈥?36AB)
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board, (1)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
225
1.8
R
胃JA
P
D
556
300
R
胃JA
T
J
, T
stg
2.4
417
鈥?5 to +150
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
Max
Unit
DEVICE MARKING
BC807鈥?6LT1 = 5A; BC807鈥?5LT1 = 5B; BC807鈥?0LT1 = 5C
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(I
C
= 鈥?0 mA)
Collector鈥揈mitter Breakdown Voltage
(V
EB
= 0, I C = 鈥?0碌A(chǔ))
Emitter鈥揃ase Breakdown Voltage
(I
E
= 鈥?.0
碌A(chǔ))
Collector Cutoff Current
(V
CB
= 鈥?0 V)
(V
CB
= 鈥?0 V, T
J
= 150擄C)
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)EBO
I
CBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?00
鈥?.0
nA
碌A(chǔ)
鈥?.0
鈥?/div>
BC807-16LT1相關(guān)型號PDF文件下載
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