鈥?/div>
PW=5ms, Duty Cycle=10%
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE
(sat)
V
BE
(on)
f
T
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
I
C
= 100碌A(chǔ), I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CB
= 30V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 2V, I
C
= 5mA
V
CE
= 2V, I
C
= 150mA
V
CE
= 2V, I
C
= 500mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 5V, I
C
=10mA,
f = 50MHz
100
25
100
25
Min.
100
80
5.0
100
10
250
0.5
1
V
V
MHz
Typ.
Max.
Units
V
V
V
nA
碌A(chǔ)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
漏2003 Fairchild Semiconductor Corporation
Rev. A, January 2003