SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT TRANSISTORS.
B
BC637
EPITAXIAL PLANAR NPN TRANSISTOR
C
FEATURES
A
Complementary to BC638.
N
K
E
G
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
RATING
60
60
5
500
625
150
-55
150
UNIT
V
V
V
mA
mW
L
D
H
F
F
1
2
3
M
C
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_
14.00 + 0.50
0.55 MAX
2.30
0.45 MAX
1.00
J
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Input Capacitance
Collector Output Capacitance
SYMBOL
I
CBO
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ib
C
ob
TEST CONDITION
V
CB
=30V, I
E
=0
I
C
=10mA, I
B
=0
I
C
=100 A, I
E
=0
I
E
=10 A, I
C
=0
V
CE
=2V, I
C
=150mA
I
C
=500mA, I
B
=50mA
V
CE
=2V, I
C
=500mA
V
CE
=2V, I
C
=50mA, f=100MHz
V
EB
=0.5V, I
C
=0, f=1MHz
V
CB
=10V, I
E
=0, f=1MHz
MIN.
-
60
60
5.0
40
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
200
50
7.0
MAX.
100
-
-
-
160
0.5
1.0
-
-
-
V
V
MHz
pF
pF
UNIT
nA
V
V
V
* Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
2000. 10. 2
Revision No : 0
1/1
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