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BC636, BC636-16, BC638,

BC640, BC640-16

High Current Transistors

PNP Silicon

http://onsemi.com

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage

BC636

BC638

BC640

Collector-Base Voltage

BC636

BC638

BC640

Emitter-Base Voltage

Collector Current 鈥?Continuous

Total Device Dissipation

@ TA = 25擄C

Derate above 25擄C

Total Device Dissipation

@ TC = 25擄C

Derate above 25擄C

Operating and Storage Junction

Temperature Range

VEBO

IC

PD

625

5.0

PD

1.5

12

TJ, Tstg

鈥?5 to

+150

Watts

mW/擄C

擄C

mW

mW/擄C

1

VCBO

鈥?5

鈥?0

鈥?0

鈥?.0

鈥?.5

Vdc

Adc

Symbol

VCEO

鈥?5

鈥?0

鈥?0

Vdc

Value

Unit

Vdc

3

BASE

COLLECTOR

2

1

EMITTER

2

3

CASE 29

TO鈥?2

STYLE 14

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance,

Junction to Ambient

Thermal Resistance,

Junction to Case

Symbol

R

胃JA

R

胃JC

Max

200

83.3

Unit

擄C/W

ORDERING INFORMATION

擄C/W

Device

BC636

BC636ZL1

BC636鈥?6ZL1

BC638

BC638ZL1

BC640

BC640ZL1

BC640鈥?6

Package

TO鈥?2

TO鈥?2

TO鈥?2

TO鈥?2

TO鈥?2

TO鈥?2

TO鈥?2

TO鈥?2

Shipping

5000 Units/Box

2000/Ammo Pack

2000/Ammo Pack

5000 Units/Box

2000/Ammo Pack

5000 Units/Box

2000/Ammo Pack

5000 Units/Box

漏

Semiconductor Components Industries, LLC, 2001

1

June, 2000 鈥?Rev. 1

Publication Order Number:

BC636/D

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