Collector Current 鈥?/div>
Continuous
Total Device Dissipation
@ T
A
= 25擄C
Derate above 25擄C
Total Device Dissipation
@ T
C
= 25擄C
Derate above 25擄C
Operating and Storage
Junction Temperature
Range
Electrostatic Discharge
Symbol
V
CEO
V
CBO
V
EBO
I
C
0.5
P
D
625
5.0
P
D
1.5
12
T
J
, T
stg
鈥?55 to +150
mW
mW/擄C
Watt
mW/擄C
擄C
1
http://onsemi.com
BC635
45
45
BC637
60
60
5.0
BC639
80
80
Unit
Vdc
Vdc
Vdc
Adc
3
BASE
1
EMITTER
COLLECTOR
2
ESD
HBM>16000, MM>2000
V
2
3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Case
Symbol
R
q
JA
200
R
q
JC
83.3
Device
BC635RL1
BC635ZL1
BC637
BC639
BC639RL1
BC639ZL1
擄C/W
Max
Unit
擄C/W
TO鈥?2 (TO鈥?26AA)
CASE 29
STYLE 14
ORDERING INFORMATION
Package
TO鈥?2
TO鈥?2
TO鈥?2
TO鈥?2
TO鈥?2
TO鈥?2
Shipping
2000 Units/Tape & Reel
2000 Units/Ammo Pack
5000 Units/Box
5000 Units/Box
2000 Units/Tape & Reel
2000 Units/Ammo Pack
漏
Semiconductor Components Industries, LLC, 2000
1
February, 2000 鈥?Rev. 2
Publication Order Number:
BC635/D
1
2
3
4
