BC 556 ... BC 559
PNP
Si-Epitaxial PlanarTransistors
General Purpose Transistors
PNP
500 mW
TO-92
(10D3)
0.18 g
Power dissipation 鈥?Verlustleistung
Plastic case
Kunststoffgeh盲use
Weight approx. 鈥?Gewicht ca.
Plastic material has UL classification 94V-0
Geh盲usematerial UL94V-0 klassifiziert
Standard Pinning
1=C 2=B 3=E
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (T
A
= 25
/
C)
BC 556
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation 鈥?Verlustleistung
Collector current 鈥?Kollektorstrom (DC)
Junction temp. 鈥?Sperrschichttemperatur
Storage temperature 鈥?Lagerungstemperatur
B open
E open
C open
- V
CE0
- V
CB0
- V
EB0
P
tot
- I
C
T
j
T
S
65 V
80 V
Grenzwerte (T
A
= 25
/
C)
BC 557
45 V
50 V
5V
500 mW
1
)
100 mA
150
/
C
- 55鈥? 150
/
C
BC 558/559
30 V
30 V
Characteristics (T
j
= 25
/
C)
Group A
DC current gain 鈥?Kollektor-Basis-Stromverh盲ltnis
- V
CE
= 5 V, - I
C
= 2 mA
Small signal current gain
Stromverst盲rkung
Input impedance 鈥?Eingangsimpedanz
Output admittance 鈥?Ausg.-Leitwert
Reverse voltage transfer ratio
Spannungsr眉ckwirkung
- I
C
= 100 mA, - I
B
= 5 mA
h
FE
110...220
Kennwerte (T
j
= 25
/
C)
Group B
200...460
Group C
420...800
h-Parameters at - V
CE
= 5V, - I
C
= 2 mA, f = 1 kHz
h
fe
h
ie
h
oe
h
re
typ. 220
1.6...4.5 k
S
18 < 30
:
S
typ.1.5 *10
-4
typ. 330
3.2...8.5 k
S
30 < 60
:
S
typ. 2 *10
-4
typ. 600
6...15 k
S
60 < 110
:
S
typ. 3 *10
-4
Collector saturation voltage 鈥?Kollektor-S盲ttigungsspg.
-V
CEsat
鈥?/div>
鈥?/div>
300 mV
1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
G眉ltig, wenn die Anschlu脽dr盲hte in 2 mm Abstand von Geh盲use auf Umgebungstemperatur gehalten werden
8
01.11.2003
1
2
