MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High Current Transistors
Order this document
by BC489/D
NPN Silicon
COLLECTOR
1
2
BASE
3
EMITTER
BC489,A,B
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
80
80
5.0
0.5
625
5.0
1.5
12
鈥?55 to +150
1
Unit
Vdc
Vdc
Vdc
Adc
mW
mW/擄C
Watt
mW/擄C
擄C
2
3
CASE 29鈥?4, STYLE 17
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
80
80
5.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
100
Vdc
Vdc
Vdc
nAdc
ON CHARACTERISTICS*
DC Current Gain
(IC = 10 mAdc, VCE = 2.0 Vdc)
(IC = 100 mAdc, VCE = 2.0 Vdc)
hFE
BC489
BC489A
BC489B
40
60
100
160
15
鈥?/div>
鈥?/div>
160
260
鈥?/div>
鈥?/div>
400
250
400
鈥?/div>
鈥?/div>
(IC = 1.0 Adc, VCE = 5.0 Vdc)*
1. Pulse Test: Pulse Width = 300
m
s, Duty Cycle 2%.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | TO-92
ETC
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英文版
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | TO-92
ETC
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英文版
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | TO-92
ETC
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英文版
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1A I(C) | TO-92
ETC
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英文版
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1A I(C) | TO-92
ETC
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英文版
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1A I(C) | TO-92
ETC
1
2
3
4
5
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