ON Semiconductort
High Current Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ T
A
= 25擄C
Derate above 25擄C
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Value
80
80
5.0
0.5
625
5.0
1.5
12
鈥?5 to +150
Unit
Vdc
Vdc
Vdc
Adc
BC489, A, B
1
mW
mW/擄C
Watt
mW/擄C
擄C
2
3
CASE 29鈥?4, STYLE 17
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
擄C/W
擄C/W
2
BASE
COLLECTOR
1
3
EMITTER
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(1)
(I
C
= 10 mAdc, I
B
= 0)
Collector鈥揃ase Breakdown Voltage
(I
C
= 100
mAdc,
I
E
= 0)
Emitter鈥揃ase Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
80
80
5.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
100
Vdc
Vdc
Vdc
nAdc
ON CHARACTERISTICS*
DC Current Gain
(I
C
= 10 mAdc, V
CE
= 2.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 2.0 Vdc)
h
FE
BC489
BC489A
BC489B
40
60
100
160
15
鈥?/div>
鈥?/div>
160
260
鈥?/div>
鈥?/div>
400
250
400
鈥?/div>
鈥?/div>
(I
C
= 1.0 Adc, V
CE
= 5.0 Vdc)*
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle 2%.
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 1
Publication Order Number:
BC489/D
BC489/D相關型號PDF文件下載
-
型號
版本
描述
廠商
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英文版
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英文版
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英文版
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1A I(C) | TO-92
ETC
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