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BC447, BC449, BC449A

High Voltage Transistors

PNP Silicon

http://onsemi.com

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage

BC447

BC449, BC449A

Collector-Base Voltage

BC447

BC449, BC449A

Emitter-Base Voltage

Collector Current 鈥?Continuous

Total Device Dissipation

@ T

A

= 25擄C

Derate above 25擄C

Total Device Dissipation

@ T

C

= 25擄C

Derate above 25擄C

Operating and Storage Junction

Temperature Range

Moisture Sensitivity Level (MSL)

Electrostatic Discharge (ESD)

Symbol

V

CEO

80

100

V

CBO

80

100

V

EBO

I

C

P

D

625

5.0

P

D

1.5

12

T

J

, T

stg

鈥?5 to

+150

MSL: 1

NA

Watts

mW/擄C

擄C

1

2

3

mW

mW/擄C

5.0

300

Vdc

mAdc

Vdc

Value

Unit

Vdc

2

BASE

3

EMITTER

COLLECTOR

1

CASE 29

TO鈥?2

STYLE 17

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance,

Junction to Ambient

Thermal Resistance,

Junction to Case

Symbol

R

胃JA

R

胃JC

Max

200

83.3

Unit

擄C/W

擄C/W

MARKING DIAGRAM

BC

44xx

YWW

BC44xx

xx

Y

WW

= Specific Device Code

= 7, 9 or 9A

= Year

= Work Week

ORDERING INFORMATION

Device

BC447

BC449

BC449A

Package

TO鈥?2

TO鈥?2

TO鈥?2

Shipping

5000 Units/Box

5000 Units/Box

5000 Units/Box

漏

Semiconductor Components Industries, LLC, 2001

1

May, 2001 鈥?Rev. 0

Publication Order Number:

BC447/D

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BC447/D相關(guān)型號(hào)PDF文件下載

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