MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC372/D
High Voltage
Darlington Transistors
NPN Silicon
COLLECTOR 3
BASE
2
BC372
BC373
1
2
EMITTER 1
3
CASE 29鈥?4, STYLE 1
TO鈥?2 (TO鈥?26AA)
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCES
VCBO
VEBO
IC
PD
PD
TJ, Tstg
BC372
100
100
12
1.0
625
5.0
1.5
12
鈥?5 to +150
BC373
80
80
Unit
Vdc
Vdc
Vdc
Adc
mW
mW/擄C
Watt
mW/擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage(1)
(IC = 100
m
Adc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 10 V, IC = 0)
1. Pulse Test: Pulse Width = 300
m
s, Duty Cycle 2.0%.
BC372
BC373
IEBO
V(BR)CES
BC372
BC373
V(BR)CBO
BC372
BC373
V(BR)EBO
ICBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
100
100
100
nAdc
100
80
12
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
nAdc
100
80
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
BC373 產(chǎn)品屬性
5,000
分離式半導體產(chǎn)品
晶體管(BJT) - 單路
-
NPN - 達林頓
1A
80V
1.1V @ 250µA，250mA
-
10000 @ 100mA，5V
625mW
200MHz
通孔
TO-226-3、TO-92-3 標準主體
TO-92-3
散裝
BC373相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
High Voltage Darlington Transistors(NPN Silicon)
ONSEMI
-
英文版
High Voltage Darlington Transistors
-
英文版
High Voltage Darlington Transistors(NPN Silicon)
ONSEMI [ON...
-
英文版
High Voltage Darlington Transistors
MOTOROLA [...
-
英文版
High Voltage Darlington Transistors(NPN Silicon)
ONSEMI
-
英文版
High Voltage Darlington Transistors
-
英文版
High Voltage Darlington Transistors(NPN Silicon)
ONSEMI [ON...
-
英文版
High Voltage Darlington Transistors
MOTOROLA [...
-
英文版
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | TO-18
ETC
-
英文版
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | TO-18
-
英文版
Bipolar NPN Device in a Hermetically sealed TO18 Metal Packa...
SEME-LAB [...
-
英文版
High Voltage Darlington Transistors
ONSEMI [ON...
-
英文版
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 1A I(C...
ETC
-
英文版
High Voltage Darlington Transistors
ONSEMI [ON...
-
英文版
Darlington Transistor NPN
ETC
-
英文版
Darlington Transistor NPN
-
英文版
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 1A I(C...
ETC
-
英文版
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 1A I(C...
ETC
-
英文版
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 1A I(C...
ETC
-
英文版
TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 1A I(C)...
ETC
1
2
3
4
