MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC368/D
Amplifier Transistors
COLLECTOR
2
3
BASE
NPN
1
EMITTER
3
BASE
PNP
1
EMITTER
COLLECTOR
2
NPN
BC368
PNP
BC369
Voltage and current are negative
for PNP transistors
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Emitter Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCES
VEBO
IC
PD
PD
TJ, Tstg
Value
20
25
5.0
1.0
625
5.0
1.5
12
鈥?55 to +150
Unit
Vdc
Vdc
Vdc
Adc
mW
mW/擄C
Watt
mW/擄C
擄C
1
2
3
CASE 29鈥?4, STYLE 14
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 100
碌A(chǔ),
IE = 0 )
Emitter 鈥?Base Breakdown Voltage
(IE = 100
碌A(chǔ),
IC = 0)
Collector Cutoff Current
(VCB = 25 V, IE = 0)
(VCB = 25 V, IE = 0, TJ = 150擄C)
Emitter Cutoff Current
(VEB = 5.0 V, IC = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
鈥?/div>
鈥?/div>
IEBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
10
1.0
10
20
25
5.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
Vdc
碌A(chǔ)dc
mAdc
碌A(chǔ)dc
ON CHARACTERISTICS
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
(VCE = 1.0 V, IC = 0.5 A)
(VCE = 1.0 V, IC = 1.0 A)
Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 20 MHz)
Collector鈥揈mitter Saturation Voltage (IC = 1.0 A, IB = 100 mA)
Base鈥揈mitter On Voltage (IC = 1.0 A, VCE = 1.0 V)
hFE
50
85
60
fT
VCE(sat)
VBE(on)
65
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
375
鈥?/div>
鈥?/div>
0.5
1.0
MHz
V
V
鈥?/div>
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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