ON Semiconductort
Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ T
A
= 25擄C
Derate above 25擄C
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
BC337
45
50
5.0
800
625
5.0
1.5
12
鈥?5 to +150
BC338
25
30
Unit
Vdc
Vdc
Vdc
mAdc
BC337,-16,-25,-40
BC338,-16,-25,-40
1
mW
mW/擄C
Watt
mW/擄C
擄C
2
3
CASE 29鈥?4, STYLE 17
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
擄C/W
擄C/W
2
BASE
3
EMITTER
COLLECTOR
1
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(I
C
= 10 mA, I
B
= 0)
Collector鈥揈mitter Breakdown Voltage
(I
C
= 100
碌A(chǔ),
I
E
= 0)
Emitter鈥揃ase Breakdown Voltage
(I
E
= 10
mA,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 30 V, I
E
= 0)
(V
CB
= 20 V, I
E
= 0)
Collector Cutoff Current
(V
CE
= 45 V, V
BE
= 0)
(V
CE
= 25 V, V
BE
= 0)
Emitter Cutoff Current
(V
EB
= 4.0 V, I
C
= 0)
BC337
BC338
I
CES
BC337
BC338
I
EBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
100
100
100
nAdc
V
(BR)CEO
BC337
BC338
V
(BR)CES
BC337
BC338
V
(BR)EBO
I
CBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
100
100
nAdc
50
30
5.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
nAdc
45
25
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
漏
Semiconductor Components Industries, LLC, 2001
1
February, 2001 鈥?Rev. 1
Publication Order Number:
BC337/D
BC337/D相關(guān)型號(hào)PDF文件下載
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型號(hào)
版本
描述
廠商
下載
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