BC327A PNP Epitaxial Silicon Transistor
BC327A
PNP Epitaxial Silicon Transistor
Switching and Amplifier Applications
鈥?Suitable for AF-Driver stages and low power output stages
1
TO-92
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings *
T
Symbol
V
CES
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
a
= 25擄C unless otherwise noted
Parameter
Value
-60
-60
-5
-800
625
150
-55 ~ 150
Units
V
V
V
mA
mW
擄C
擄C
Electrical Characteristics
Symbol
BV
CEO
BV
CES
BV
EBO
I
CES
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
T
a
= 25擄C unless otherwise noted
Parameter
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
= -10mA, I
B
=0
I
C
= -100碌A(chǔ), V
BE
=0
I
E
= -100碌A(chǔ), I
C
=0
V
CE
= -45V, V
BE
=0
V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -500mA
I
C
= -500mA, I
B
= -50mA
V
CE
= -1V, I
C
= -300mA
V
CE
= -5V, I
C
= -10mA, f=20MHz
V
CB
= -10V, I
E
=0, f=1MHz
Min.
-60
-60
-5
Typ.
Max.
Units
V
V
V
-100
100
40
400
-0.7
-1.2
100
12
nA
V
V
MHz
pF
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
BC327A Rev. A