MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
Order this document
by BC307/D
PNP Silicon
COLLECTOR
1
2
BASE
3
EMITTER
BC307,B,C
BC308C
BC309B
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
BC
307
鈥?5
鈥?0
BC
308C
鈥?5
鈥?0
鈥?.0
鈥?00
350
2.8
1.0
8.0
鈥?55 to +150
BC
309
鈥?5
鈥?0
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
Watts
mW/擄C
擄C
1
2
3
CASE 29鈥?4, STYLE 17
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
357
125
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 鈥?.0 mAdc, IB = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 鈥?00
m
Adc, IC = 0)
Collector鈥揈mitter Leakage Current
(VCES = 鈥?0 V, VBE = 0)
(VCES = 鈥?0 V, VBE = 0)
BC307
BC308C
BC309B
BC307
BC308C
BC309B
BC307
BC308C
BC309B
BC307
BC308C
BC309B
V(BR)CEO
鈥?5
鈥?5
鈥?5
鈥?.0
鈥?.0
鈥?.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?.2
鈥?.2
鈥?.2
鈥?.2
鈥?.2
鈥?.2
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?5
鈥?5
鈥?5
鈥?.0
鈥?.0
鈥?.0
Vdc
V(BR)EBO
Vdc
ICES
nAdc
(VCES = 鈥?0 V, VBE = 0) TA = 125擄C
(VCES = 鈥?0 V, VBE = 0) TA = 125擄C
碌A(chǔ)
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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MOTOROLA
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2
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