BC307B, BC307C
Amplifier Transistors
PNP Silicon
http://onsemi.com
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation
@ TA = 25擄C
Derate above 25擄C
Total Device Dissipation
@ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
350
2.8
PD
1.0
8.0
TJ, Tstg
鈥?5 to
+150
Watts
mW/擄C
擄C
mW
mW/擄C
Value
鈥?5
鈥?0
鈥?.0
鈥?00
Unit
Vdc
Vdc
Vdc
mAdc
3
EMITTER
2
BASE
COLLECTOR
1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Case
Symbol
R
胃JA
R
胃JC
Max
357
125
Unit
擄C/W
擄C/W
1
2
3
CASE 29
TO鈥?2
STYLE 17
ORDERING INFORMATION
Device
BC307B
BC307BRL1
BC307BZL1
BC307C
Package
TO鈥?2
TO鈥?2
TO鈥?2
TO鈥?2
Shipping
5000 Units/Box
2000/Tape & Reel
2000/Ammo Pack
5000 Units/Box
漏
Semiconductor Components Industries, LLC, 2001
1
November, 2001 鈥?Rev. 2
Publication Order Number:
BC307/D